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 DATA SHEET
MOS INTEGRATED CIRCUIT
PD16803
MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The PD16803 is a monolithic dual H bridge driver circuit which uses N-channel power MOS FETs in its driver stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and power consumption as compared with conventional driver circuits that use bipolar transistors. In addition, the drive current can be adjusted by an external resistor in a power-saving mode. The PD16803 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for the head actuator of an FDD.
FEATURES
* Low ON resistance (sum of ON resistors of top and bottom transistors) RON1 = 1.5 TYP. (VM = 5.0 V) RON2 = 2.0 TYP. (VM = 12.0 V) * Low current consumption: IDD = 0.4 mA TYP. * Stop mode function that turns OFF all output transistors * Compact surface mount package: 20-pin plastic SOP (300 mil)
PIN CONFIGURATION (Top View)
C1H C2L VM1 1A PGND 2A VDD IN1 IN2 INC
1 2 3 4 5 6 7 8 9 10
20 19 18 17 16 15 14 13 12 11
C1L C2H VG 1B PGND 2B VM2 RX PS DGND
Document No. S11452EJ2V0DS00 (2nd edition) Date Published July 1997 N Printed in Japan
(c)
1997
PD16803
ORDERING INFORMATION
Part Number Package 20-pin plastic SOP (300 mil)
PD16803GS
BLOCK DIAGRAM
0.01 F VDD C1L C1H C2L 0.01 F C2H VG 0.01 F
OSC CIRCUIT
CHARGE PUMP
2 x VDD + VM
Note 1
VM
VM1 RX BAND GAP REFERENCE LEVEL CONTROL CIRCUIT "H" BRIDGE 1
Note 2
1A 1B PGND VM2
Note 3
PS
SWITCH CIRCUIT
50 k
50 k
50 k
IN1 IN2 INC DGND PGND CONTROL CIRCUIT LEVEL SHIFT 2A "H" BRIDGE 2 2B
50 k
Connected in diffusion layer
Notes 1. 3 x VDD where VM VDD 2. The power-saving mode is set when the PS pin goes high. In this mode, the voltage of the charge pump circuit is lowered and the ON resistance of the H bridge driver transistor increases, limiting the current. In the power-saving mode, the motor cannot turn. 3. It is recommended to connect an external capacitor of 0.22 F or more between VM and GND to stabilize the operation.
2
PD16803
FUNCTION TABLE
Excitation Direction <1> <2> <3> <4> - INC H H H H L IN1 H L L H x IN2 H H L L x H1 F R R F Stop H2 F F R R
H2R H1F <4> <1>
H2F
F: Forward R: Reverse
<3> H1R
<2>
For the excitation waveform timing chart, refer to APPLICATION EXAMPLE.
FORWARD VM REVERSE VM STOP VM
ON
OFF
OFF
ON
OFF
OFF
A
B
A
B
A
B
OFF
ON
ON
OFF
OFF
OFF
3
PD16803
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Parameter Supply voltage (motor block) Supply voltage (control block) Power consumption Symbol VM VDD Pd1 Pd2 Instantaneous H bridge driver current Input voltage Operating temperature range Operation junction temperature Storage temperature range ID (pulse) VIN TA TjMAX. Tstg Rating -0.5 to +15 -0.5 to +7 1.0Note 1 1.25Note 2 1.0Note 2, 3 -0.5 to VDD + 0.5 0 to 60 150 -55 to +125 A V C C C Unit V V W
Notes 1. IC only 2. When mounted on a printed circuit board (100 x 100 x 1 mm, glass epoxy) 3. t 5 ms, Duty 40 %
Pd - TA Characteristics 1.4 When mounted on printed circuid boad 1.2
Average power consumption Pd (W)
IC only 1.0
0.8
0.6
0.4
0.2
0
20
40
60
80
100
Ambient temperature TA (C)
4
PD16803
RECOMMENDED OPERATING CONDITIONS
Parameter Supply voltage (motor block) Supply voltage (control block) RX pin connection resistance H bridge driver currentNote Charge pump capacitance Operating temperature Symbol VM VDD RX IDR C1 to C3 TA 5 0 MIN. 4.0 4.0 2 380 20 60 TYP. 5.0 5.0 MAX. 13.2 6.0 Unit V V k mA nF C
Note When mounted on a printed circuit board (100 x 100 x 1 mm, glass epoxy) ELECTRICAL SPECIFICATIONS (Within recommended operating conditions unless otherwise specified)
Parameter OFF VM pin current Symbol IM INC pin Conditions lowNote 1 VM = 6.0 V VDD = 6.0 V VM = 13.2 V VDD = 6.0 V VDD pin current IN1, IN2, INC pin high-level input current IN1, IN2, INC pin low-level input current PS pin high-level input current IIH2 IIL1 IDD IIH1 Note 2 TA = 25 C, VIN = VDD 0 TA 60 C, VIN = VDD TA = 25 C, VIN = 0 V 0 TA 60 C, VIN = 0 V TA = 25 C, VIN = VDD 0 TA 60 C, VIN = VDD PS pin low-level input current IIL2 TA = 25 C, VIN = 0 V 0 TA 60 C, VIN = 0 V IN1, IN2, INC pin input pull-up resistance PS pin input pull-down resistance RIND RINU TA = 25 C 0 TA 60 C TA = 25 C 0 TA 60 C Control pin high-level input voltage Control pin low-level input voltage H bridge circuit ON resistanceNote 3 RON relative accuracy VIH VIL RON1 RON2 VDD = 5 V, VM = 5 V VDD = 5 V, VM = 12 V Excitation direction <2>, <4>Note 4 35 25 35 25 3.0 -0.3 1.5 2.0 50 50 0.4 MIN. TYP. MAX. 1.0 1.0 1.0 1.0 2.0 -0.15 -0.2 0.15 0.2 -1.0 -2.0 65 75 65 75 VDD + 0.3 0.8 3.0 4.0 5 10 2.5 5 5 0.3 2 5 5 ms V % % V V k k mA mA Unit
A
mA mA
A
A
RON
Excitation direction <1>, <3> VX voltage in power-saving modeNote 5 VX relative accuracy in power-saving mode Charge pump circuit (VG) turn ON time H bridge circuit turn ON time H bridge circuit turn OFF time TONG TONH TOFFH VX VDD = VM = 5 V, RX = 50 k Excitation direction <2>, <4>Note 4
VX
Excitation direction <1>, <3> VDD = 5 V, VM = 5 V C1 = C2 = C3 = 10 nF RM = 20
s s
Notes 1. When VDD < VM, a current (IM1) always flow from the VM1 pin to the charge pump circuit because a gate voltage (2 x VDD + VM) is generated. 2. When IN1 = IN2 = INC = "H", PS = "L" 3. Sum of ON resistances of top and bottom transistors 4. For the excitation direction, refer to FUNCTION TABLE. 5. VX is a voltage at point A (FORWARD) or B (REVERSE) of the H bridge in Function Table.
5
PD16803
CHARACTERISTIC CURVES
RON vs. VDD (= VM) Characteristics 3
H bridge ON resistance RON ()
RON vs. VM Characteristics 8 RM = 60 7
H bridge ON resistance RON ()
RM = 20
2
6 5 4 3 2 1 0 10 11 12 Motor voltage VM (V) 13 14 VDD = 5.0 V VDD = 5.5 V VDD = 4.5 V
1
0
4.0
5.0
6.0
Supply voltage VDD (= VM) (V)
RON vs. Tj Characteristics 3
H bridge ON resistance RON ()
VX vs. RX Characteristics 4.0
VDD = VM = 5.0 V RM = 20
VX voltage in power-saving mode VX (V)
3.5 3.0 2.5 2.0 1.5 1.0 0.5
VDD = VM = 5 V RM = 20 VX : Note 5
2
1
0
25
50
75
100
125
150
Operation junction temperature Tj (C)
0 VX vs. VDD (= VM) Characteristics
VX voltage in power-saving mode VX (V)
20
40
60
80
100
120 140 160
3.0 RX = 50 k RM = 20
RX pin connection resistance RX (k)
2.5
2.0
4.0
5.0 Supply voltage VDD (= VM) (V)
6.0
6
1. Connection with 1-chip FDD LSI PC2100AGF
APPLICATION CIRCUIT EXAMPLE
PC2100AGF Stepping Motor Excitation Timing Chart
Step input External circumference seek Direction PH11 PH21 Internal circumference seek
0.01 F
0.01 F
0.01 F
VDD
C1L
C1H
C2L
C2H
VG
OSC CIRCUIT
CHARGE PUMP
2 x VDD + VM
VM
VM1
RX BAND GAP REFERENCE LEVEL CONTROL CIRCUIT "H" BRIDGE 1 0.22 F 1A
1B
SPF0
PS 50 k 50 k 50 k 50 k
SWITCH CIRCUIT
PGND VM2
PH11
IN1 IN2 INC
PH21
CONTROL CIRCUIT
LEVEL SHIFT
2A "H" BRIDGE 2
PD16803
2B
STB0
DGND PGND
PC2100AGF
7
Connected in diffusion layer
50 k
50 k
50 k
50 k
8
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
0.01 F 0.01 F 0.01 F VDD C1L C1H C2L C2H VG OSC CIRCUIT CHARGE PUMP 2 x VDD + VM VM
2. Connection with 1-chip FDD LSI PC2100AGF
VM1
RX BAND GAP REFERENCE LEVEL CONTROL CIRCUIT "H" BRIDGE 1 0.22 F 1A
1B
SPF0
PS
SWITCH CIRCUIT
PGND VM2
PH11
IN1 IN2 INC DGND
PH21
CONTROL CIRCUIT
LEVEL SHIFT
2A "H" BRIDGE 2
2B
PGND
PC2100AGF
Connected in diffusion layer
PD16803
PD16803
20 PIN PLASTIC SOP (300 mil)
20 11 detail of lead end
1 A
10 H
G
P
I
J
F
K
E
C D
NOTE
N M
M
B
L
ITEM MILLIMETERS A B C D E F G H I J K L M N P 13.00 MAX. 0.78 MAX. 1.27 (T.P.) 0.40 +0.10 -0.05 0.10.1 1.8 MAX. 1.55 7.70.3 5.6 1.1 0.20 +0.10 -0.05 0.60.2 0.12 0.10 3 +7 -3
INCHES 0.512 MAX. 0.031 MAX. 0.050 (T.P.) 0.016 +0.004 -0.003 0.0040.004 0.071 MAX. 0.061 0.3030.012 0.220 0.043 0.008 +0.004 -0.002 0.024 +0.008 -0.009 0.005 0.004 3 +7 -3
Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition.
P20GM-50-300B, C-4
9
PD16803
RECOMMENDED SOLDERING CONDITIONS
It is recommended to solder this product under the conditions described below. For soldering methods and conditions other than those listed below, consult NEC. Surface mount type For the details of the recommended soldering conditions of this type, refer to Semiconductor Device Mounting Technology Manual (C10535E).
Symbol of Recommended Soldering IR30-00
Soldering Method Infrared reflow
Soldering Conditions Peak package temperature: 230 C, Time: 30 seconds MAX. (210 C MIN.), Number of times: 1, Number of days: NoneNote Peak package temperature: 215 C, Time: 40 seconds MAX. (200 C MIN.), Number of times: 1, Number of days: NoneNote Solder bath temperature: 260 C MAX., Time: 10 seconds MAX., Number of times: 1, Number of days: NoneNote Pin temperature: 300 C MAX., Time: 10 seconds MAX., Number of days: NoneNote
VPS
VP15-00
Wave soldering
WS60-00
Partial heating
-
Note The number of storage days at 25 C, 65 % RH after the dry pack has been opened Caution Do not use two or more soldering methods in combination (except partial heating).
10
PD16803
[MEMO]
11
PD16803
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5
2


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